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Contemporary architecture often requires adhesive connections as a bonding method of façade cladding elements to the supporting substructure, due to their visually smooth surface without the interruption by bolts.
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Furthermore, we have developed a new bonding method using a low melting point metal (alloy method) to improve the electric conductivity and mechanical strength.
Transient liquid phase (TLP) diffusion bonding with a temperature gradient across the bond region is the basis of a new bonding method which results in joints with excellent reliability and also shear strengths as high as those of the parent material (e.g. aluminium-based alloys and composites).
Present research produced W and SiC/SiC clad plates using a diffusion bonding method and tried to investigate the thermal characters of the interphase between W and SiC/SiC composites.
In this study, imidazole ionic liquids immobilized on silica gel were synthesized through a chemical bonding method, and the immobilized dodecylimidazolium ionic liquid was selected as the receiving phase material in a POCIS (polar organic chemical integrative sampler) like passive sampler to monitor five perfluoroalkyl substances (PFASs) in water.
PDMS is a typical bonding method for polymer bonding, especially for rapid prototyping and used as plastic substrate.
A direct bonding method was used to realize nanofluidic channels between PC grating grooves and PDMS cladding layer.
Moreover, a simple remote NH3 plasma treatment developed on an ALD-HfO2 membrane to replace the complicated silanization procedure for biomolecular immobilization in a covalent bonding method was proposed.
A thermal fusion bonding method was developed to bond TPU film to the PMMA components in a single step.
In this paper, a novel rapid bonding method plus alloying design was proposed to cheaply fabricate SnNi intermetallic joint for high temperature electronic packaging.
In this study, a direct diffusion bonding method is designed to bond tungsten (W) and copper (Cu) without using an interlayer metal at a temperature close to the melting point of copper (TmCu).
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