Sentence examples for Theoretical thickness from inspiring English sources

The Tafel slope of −64 mV dec−1 was recorded for the Pd layer electrodeposited at 20 mV vs. saturated calomel electrode (SCE) for 5 s, mainly composed of isolated hemispherical 3D Pd centers and dendrites (sample (2)), while for Pd electrodeposit with the theoretical thickness of 1000 nm (sample (1)) Tafel slope of −143 mV dec−1 was detected.

In the case of our CeNi5 films, the maximum theoretical thickness of 5 μm was not attained.

Considering the theoretical thickness of a graphene layer of 0.34 nm, the AFM data implied that about five to seven layers of monolayer nanographene sheets consisted of GQDs-1 and GQDs-2.

It will be found that the penetration distances of phospholipid films are smaller than that of films' theoretical thickness, which is mainly due to the deformation of the phospholipid molecules when they are interacting with AFM tip during the penetrating process in our experiment.

As shown in Fig. 1c, high-resolution TEM image demonstrates that the thickness of MoS2 monolayer is ca. 0.7 nm, and the nanosheets consisted of about two to five layers, which could be indexed well with the theoretical thickness of MoS2 monolayer (S Mo S unit cell) [29, 30].

The thickness of the alkyl tails is 12 ± 2 Å, consistent with the theoretical thickness of fluid phase myristoyl tails.

8) Create a thickness scale on the sample collector through the following: a) calculate the area (A) of accumulation based on the radius (r) of the outer container (A = πr2); b) create a chart calculating the volumes (V) of water (density ~1 g/correspondingnding to different theoretical thicknesses (T) (V = AT).

These values are in good agreement with the theoretical thicknesses of 2.40 and 0.51 nm, which were calculated through molecular dynamics (MD) simulations for DBA-SH and ClPrSH SAMs on gold surface, respectively (see the Supporting Information for simulation details).

where c represents the theoretical maximum thickness at the vent and m characterises the rate of decrease in tephra thickness.

The exponential method, which uses the equation T x) = ce−mx (where T is a function of root isopach area, c is the theoretical maximum thickness at the vent, and m is the rate of decrease in tephra thickness; Pyle 1989; Fierstein and Nathenson 1992), was adapted to compare estimation results using mass (Fig. 4).

Based on the calculated theoretical critical thickness hc and the experimental hc r,2), Fischer's model seems to be appropriate for describing the critical thickness of the InGaN/GaN.