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The resist used for EBL contains organic compounds.
The resist is affected near the holes and pushed back.
The resist patterns consisted of arrays of dots of bare Au surface, with the remaining area covered by the resist (ZEP520, ZEON).
The resist was cleaved and coated with a 6-nm Cr layer before imaging.
The resist and the Au film were not removed for SEM inspection.
The resist thickness was controlled as the same as possible in each step (~300 nm).
The resist was prebaked on a hot plate at 180 °C for 90 s.
The resist developing was done using pure AR 300 47 developer.
The resist layer also protects the silver against the oxidation process.
The resist was developed in XP SU-8.
The resist is insulation and blocks charge dissipation.
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