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The dislocations are marked with arrows.
The dislocations were trapped within a thin InAs epilayer.
The dislocations are trapped within the initial epilayer.
The dislocations are modeled as moving polygons.
The dislocations were subsequently reduced, with the patient under narcosis, with use of the traditional method.
The dislocations thus formed act as traps and non-radiative recombination centers [28].
The dislocations form small craters on the surface, as seen in the STM images (Fig. 4d).
The dislocations were also etched, showing the location of SGBs in (a).
The dislocations are blocked within the initial epilayer with the two-SiO2-sidewall-patterned Si substrate.
The dislocations produce dangling bonds which introduce energy levels into the band gap, enabling the absorption of light.
Colonial America found that the dislocations of war spread disease.
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