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Figure 10 Calculated Si peak intensity ratios ( I C-Si / I a-Si ) in different Si concentration.
In process A, amorphous SiNWs were fabricated by MAE of the i-a-Si layer.
Subsequently, an intrinsic a-Si (i-a-Si) layer was deposited on the AIC-poly-Si by radio frequency sputtering.
During the MAE process, silver particles were deposited on the i-a-Si layer by electroless silver plating.
For a p- a-SiN: H/a-Si: H)-i (a-Si: H)-n (a-Si: H) samp- a-SiNcomp- a-SiN Fermi level position relative to tH/a-Sii: H -ilence band edge.
In process B, the i-a-Si layer was crystallized by solid phase crystallization (SPC) to give the poly-Si prior to nanowire formation through thermal annealing at 900 °C for 30 min in a forming gas at ambient conditions.
Figure 3 depicts the cross-sectional SEM images of SiNWs fabricated using process A and process B. The shape of the wires was found to be very similar for both processes, indicating that similar patterns of silver nanoparticles were formed on both the i-a-Si and poly-Si layers.
For the study, the following polymers were synthesized using anionic polymerization: (i) a symmetric SI diblock copolymer (SI-5/5) having a number-average molecular weight (Mn) of 1.0×104, and (ii) two hPIs having Mn=1.14×104 (PI-11) and 1.41×104 (PI-14).
The structure of the p-i-n a-Si solar cells is shown in Figure 1.
At 0 V, the RTCO/p remains below 2.5 Ω cm2 when the temperature is over 363 K. Figure 4b, c shows the dependence of solar cell characteristics on the measured temperature of p-i-n a-Si solar cells with AZO as TCO.
(But was I loving it? Si, si).
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