Sentence examples for Following thicknesses from inspiring English sources

At each location, the temperatures are measured through the following thicknesses: 30 mm from the exposure surface (C1), midpoint of the wall thickness (C2), and 30 mm from the non-exposure surface (C3).

Tissues were sectioned on a cryostat at the following thicknesses: tibial nerve and sciatic nerve at 10 μm, lumbar spinal cord 20 µm, skin 14 μm, onto SuperFrost Ultra Plus® slides.

Following thickness measurements, the samples were immersed in room temperature saline solution.

Then, the other influencing factors are as follows: thickness of the main support plate, thickness of the annular support plate and thickness of the support plate, whereas the influence of the lower cover plate thickness on fatigue life is minimal.

The optimized properties of the carbon paper are as follows: thickness 0.23 mm, density 0.53 g cm−3, resistivity 2.6 mΩ cm−1, tensile strength 19.4 MPa, porosity 66%, gas permeability 2 080 mm cm−2 h−1 mmAq−1.

The heater dimensions and gaps in the optimized micro-Pirani gauge are as follows: thickness of 1.5 μm, width of 3 μm, and length of 350 μm for the heater, and gaps of 0.6 and 1 μm in the lateral and vertical directions, respectively.

Sensitivity of the geometric parameter is from large to small as follows: thickness, central angle, radius and separation.

The default device parameters are as follow: thickness of the silicon film (Tsi) is 20 nm, length of the Gate1 (Lg1) is 400 nm, length of the Gate2 (Lg2) is 200 nm, length of the gate gap (Lgap) is 50 nm, and thickness of the Gate oxide HfO2 (Toxide) is 3 nm.

The value of the geometric parameters of the MR damper for its optimal damping force came out to be as follows: Thickness of cylinder (A, second level) = 8 mm, Pole length (B, third level) = 28 mm, Radial distance from piston rod to coil width (C, third level) = 09 mm, and Clearance between piston and cylinder (D, first level) = 0.8 mm.

The simulation parameters of the proposed device are as follows: thickness of the N+ pocket is 5 nm (T p); height of the source regions and drain region is 40 nm (H s) and 20 nm (H d), respectively; length and height of the gate are 10 nm (L g) and 60 nm (H g), respectively; thickness of the gate oxide (HfO2) is 2 nm (T ox); length of gate-pocket overlap is 7 nm (L ov).

Thickness maps are further useful to follow thickness changes over time.