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STS and STTS were prepared as minigenes (Integrated DNA Technologies) and were amplified by PCR using primers STSF and STSR.
The sequences of the terminator fragments STS and STTS (see Additional file 1: list of synthetic DNA fragments) were designed based upon iGEM parts.
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TFZ and STT participated in analyzing the redundancy of parameters.
As described in "PRAM reliability" and "STT-RAM reliability" sections, raw error rate of MLC PRAM and STT-RAM can significantly be reduced using circuit-level techniques.
"ECC schemes" section focuses on the details of the ECC schemes for PRAM and STT-RAM with hardware overhead.
In this article, we first study in detail the causes of errors for PRAM and STT-RAM.
These new memory devices such as RRAM, PCM, and STT-RAM have read/write/retention/endurance characteristics different from those of conventional SRAM, DRAM, and Flash [82].
In this article, we advocate the use of circuit parameter tuning and ECC to improve the reliability of emerging memory technologies such as MLC-PRAM and STT-RAM.
This method combines the advantages of both TAS and STT technologies, giving the best trade-off among data reliability, power efficiency, speed and density.
Development of ECC techniques for both MLC-PRAM and STT-RAM that can be used in conjunction with circuit-level techniques to further enhance the reliability.
Sentiment toward these two financial concerns is heavily pessimistic, with HCBK's SOIR at an annual peak and STT's ratio falling just four percentage points shy of a 52-week high.
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