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A field effect transistor is a device with three terminals a source, a drain, and a gate.
The term describes a Field Effect Transistor (FET) formed in a narrow silicon "fin" that rises above the surface of the chip.
Both may arise due to a field effect, or alternatively some MIC may represent metastases from the primary ovarian tumor.
The proprietary Senseg E-Sense surface and driving electronics create a small pressure between finger tissue and Senseg E-Sense surface, using a field effect.
a, Field effect measurement at T = 293 K for graphene on HMDS (black) and for graphene on bare SiO2 (red).
Ambipolar behavior is a typical characteristic of a field effect transistor (FET) made with a narrow band gap semiconductor.
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That formed an electronic device known as a field-effect transistor.
One could be used to build a field-effect transistor, a key component of electronic devices.
A transistor created by using the field effect is called a field-effect transistor (FET).
In their paper, the researchers fabricated a 2-D transistor, called a field-effect transistor.
Field-effect transistor electrodes place the membrane over the gate of a field-effect transistor.
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