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The imaging parameters were as follows: 3D TOF: 18/2.84 (TR/TE); flip angle, 20°; section thickness, 0.77 mm; readout bandwidth, 300 Hz/pixel; rectangular field of view, 210 mm; matrix, 256 × 256; unenhanced true FISP: 6.82/3.41 (TR/TE); flip angle, 70°; section thickness, 0.7 mm; readout bandwidth, 501 Hz/pixel; rectangular field of view, 210 mm; matrix, 256 × 256.
In this way, we get a 36 4 readout channel reducing.
The signals from a total of 2355 strips are processed by 78 readout ASICs.
A simplified readout system is implemented with 4 readout modules in a PXI crate.
The pixel sensors with 25×500μm2 readout by FE-I4 chips have been designed at the University of Liverpool.
Sensor signals are read by a 128-channel VA1TA3 readout chip.
In a prototype ASIC, 36 readout cells were implemented by TSMC 0.25‐μm CMOS process.
The chip is a matrix of 32 columns each containing 256 readout cells.
The SPD is made of hybrid silicon pixel detectors with a total of 9.8×106 readout cells.
The TLD-100 readout system was optimized for various radiotherapy beam doses using the Taguchi method.
An experimental array of 10 × 8 readout circuits was fabricated using TSMC 2P4M 0.35 μm 5 V technology.
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